TSM4459 30v p-channel mosfet 1/4 version: a12 sop - 8 product summary v ds (v) r ds(on) (m ? ) i d (a) -30 5.2 @ v gs = -10v -17 9.5 @ v gs = -4.5v features advance trench process technology high density cell design for ultra low on-resistan ce block diagram p-channel mosfet application dc-dc converter battery power system ordering information part no. package packing TSM4459cs rlg sop-8 2.5kpcs / 13 reel note: g denote for halogen free product absolute maximum rating (t a = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current t a = 25 o c i d -17 a t a = 70 o c -13.6 pulsed drain current i dm -68 a maximum power dissipation note a. t a = 25 o c p d 2.5 w t a = 70 o c 1.6 operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg - 55 to +150 o c thermal performance parameter symbol limit unit junction to ambient thermal resistance note a. r ? ja 50 o c/w notes: a. the device surface mounted on 1inch 2 fr4 board with 2oz copper. pin definition : 1. source 8. drain 2. source 7. drain 3. source 6. drain 4. gate 5. drain
TSM4459 30v p-channel mosfet 2/4 version: a12 electrical specifications (t a = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = -250ua bv dss -30 -- -- v gate threshold voltage v ds = v gs , i d = -250a v gs(th) -1 -- -3 v gate body leakage v gs = 20v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = -30v, v gs = 0v i dss -- -- -1.0 a drain-source on-state resistance a v gs = -10v, i d = -9a r ds(on) -- 4 5.2 m ? v gs = -4.5v, i d = -9a -- 7 9.5 diode forward voltage i s = -18a, v gs = 0v v sd -- 0.8 -- v dynamic total gate charge v ds = -24v, i d = -17a, v gs = -4.5v q g -- 78.4 -- nc gate-source charge q gs -- 25.1 -- gate-drain charge q gd -- 38.7 -- gate resistance f = 1.0mhz r g -- 2.88 -- ? input capacitance v ds = -15v, v gs = 0v, f = 1.0mhz c iss -- 6205 -- pf output capacitance c oss -- 963 -- reverse transfer capacitance c rss -- 330 -- switching turn-on delay time v dd = -15v, r l = 15 ? , v gen = -10v, r g = 4.7 ? t d(on) -- 75.2 -- ns turn-on rise time t r -- 33.8 -- turn-off delay time t d(off) -- 275 -- turn-off fall time t f -- 92.1 -- notes: a. pulse test: pw 300s, duty cycle 2%
TSM4459 30v p-channel mosfet 3/4 version: a12 sop-8 mechanical drawing sop-8 dimension dim millimeters inches min max min max. a 4.80 5.00 0.189 0.196 b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.054 0.068 d 0.35 0.49 0.014 0.019 f 0.40 1.25 0.016 0.049 g 1.27bsc 0.05bsc k 0.10 0.25 0.004 0.009 m 0o 7o 0o 7o p 5.80 6.20 0.229 0.244 r 0.25 0.50 0.010 0.019
TSM4459 30v p-channel mosfet 4/4 version: a12 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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